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(322) Production(s) de GIL B.
(Al,Ga)N quantum dots for deep UV LEDs Auteur(s): Brault Julien, Matta S., Al khalfioui Mohamed, Korytov M, Ngo T. H., Vuong P., Leroux Mathieu, Damilano Benjamin, Chenot S., Vennegues P, Duboz J. y., Massies Jean, Chaix C., Peyre H., Juillaguet S., Contreras S., Gil B.
Conference: International Workshop on Nitride Semiconductor (Kanazawa, JP, 2018-11-11) |
Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN Auteur(s): Contreras S., Konczewicz L., Juillaguet S., Peyre H., Al Khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Gil B., Brault Julien (Affiches/Poster) International Workshop on Nitride Semiconductor (Kanazawa, JP), 2018-11-11 |
Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy Auteur(s): Brault Julien, Leroux Mathieu, Matta S., Al Khalfioui Mohamed, Damilano Benjamin, Peyre H., Contreras S., Juillaguet S., Gil B. (Affiches/Poster) International Workshop on Nitride Semiconductor (Kanazawa, JP), 2018-11-11 |
Enhanced excitonic emission efficiency in porous GaN Auteur(s): Ngo T. H., Gil B., Shubina T., Damilano B., Vezian Stephane, Valvin P., Massies Jean (Article) Publié: Scientific Reports, vol. 8 p.15767 (2018) Texte intégral en Openaccess : |
Multiwall MoS2 tubes as optical resonators Auteur(s): Kazanov Dmitrii, Poshakinskiy A. V., Davydov V yu, Smirnov A.N., Eliseyev A., Kirilenko D.a., Remskar M., Fathipour S, Mintairov A, Seabaugh A, Gil B., Shubina T. (Article) Publié: Applied Physics Letters, vol. 113 p.101106 (2018) |
Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE Auteur(s): Matta S., Brault Julien, Korytov Maxim, Vuong P., Chaix C., Al Khalfioui M., Vennegues P, Massies Jean, Gil B. (Article) Publié: Journal Of Crystal Growth, vol. 499 p.40 (2018) |
UVA and UVB light emitting diodes with AlyGa1-yN quantum dot active regions covering the 305-335 nm range Auteur(s): Brault Julien, Al Khalfioui M., Matta S., Damilano B., Leroux Mathieu, Chenot Stéphane, Korytov Maxim, Nkek J. E., Vennegues P, Duboz Jean-Yves, Massies Jean, Gil B. (Article) Publié: Semiconductor Science And Technology, vol. 33 p.075007 (2018) Texte intégral en Openaccess : |