InGaN/GaN single quantum wells were grown by molecular beam epitaxy on the silicon substrate onto thin AlN and GaN buffer layers. The InGaN/GaN structure is porosified using a combination of SixNy nanomasking and sublimation and compared with a non-porous reference. The photoluminescence efficiency at room temperature of the porosified sample is improved by a factor reaching 40 compared with the reference sample. Plan-view and cross-sectional transmission electron microscopy images reveal that the remaining material is free of dislocation cores. The regions around dislocations are, thus, preferentially sublimated. This explains the strong photoluminescence improvement of nanoporous InGaN/GaN samples.

A porous InGaN/GaN blue light-emitting diode isdemonstrated using selective area sublimation. Transmissionelectron microscopy reveals that the structure is porous down tothe Si substrate; however, the porosity is higher in the GaN buffer,while smaller pores are observed in the active region. This changeof porosity between the active region and the buffer is explained bythe modification of the dislocation pattern in the heterostructure,which is evidenced by weak beam transmission electronmicroscopy on a nonporosified reference sample. Cathodolumi-nescence mapping and electron beam-induced current microscopy(EBIC) analyses are used to probe the impact of porosification onthe optical and electrical properties of the structure at nanoscaledimensions. It is observed that neither the quantum well emissionnor the p−n junction EBIC spatial profile was degraded after porosification with respect to the nonannealed reference sample. A light-emitting diode with a fully porous active region is fabricated using a parylene pore filling for electrical insulation, and its electroluminescence is analyzed.

We report on the growth of 2D layered indium selenide films on (0001)-oriented sapphire substrates by coevaporation. The θ − 2θ x-ray diffractograms reveal that the (00l) planes are preferentially oriented parallel to the substrate with a tendency to deviate from the 2D stacking as a function of the growth time. The ϕ-scans performed for the (107) and (10 10) orientations of the hexagonal (h) and rhombohedral (r) phases, respectively, reveal that both polytypes coexist in the epitaxial films. We show that the merging of the h-(100), r-(101), h-(101), and r-(102) lines results in different spectral shapes in the θ − 2θ scans according to samples, which gives qualitative information about the contribution of each polytype.

The sp2-bonded layered compound boron nitride (BN) exists in more than a handful of different polytypes (i.e., different layer stacking sequences) with similar formation energies, which makes obtaining a pure monotype of single crystals extremely tricky. The co-existence of polytypes in a similar crystal leads to the formation of many interfaces and structural defects having a deleterious influence on the internal quantum efficiency of the light emission and on charge carrier mobility. However, despite this, lasing operation was reported at 215 nm, which has shifted interest in sp2- bonded BN from basic science laboratories to optoelectronic and electrical device applications. Here, we describe some of the known physical properties of a variety of BN polytypes and their performances for deep ultraviolet emission in the specific case of second harmonic generation of light.

The presence of metastable Bernal stacking boron nitride is verified by combining second harmonic generation (SHG) and photoluminescence (PL) spectroscopy. The scanning confocal cryomicroscope, operating in the deep-ultraviolet range, shows a one-to-one correlation between inversion symmetry breaking probed by SHG and the detection of an intense PL line at ∼6.035 eV, the specific signature of the noncentrosymmetric Bernal stacking. The coherent character of the Bernal phase in boron nitride crystals is demonstrated by two-photon excitation spectroscopy. Direct and indirect excitons are simultaneously detected in the emission spectrum; they are quasi-degenerate, in agreement with theoretical predictions for Bernal boron nitride. The transition from AA′ to AB stacking is characterized by an intense emission from stacking faults at the grain boundaries of hexagonal and Bernal boron nitride crystals.