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(322) Production(s) de GIL B.
High excitation photoluminescence effects as a probing tool for the growth of Cu(In,Ga)Se-2 Auteur(s): Moret M., Briot O., Gil B., Lepetit Thomas, Arzel Ludovic, Barreau Nicolas
Conference: PHYSICS SIMULATION AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES IV (San Francisco, California, US, 2015) |
Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates Auteur(s): Selles J., Rosales D., Gil B., Cassabois G., Guillet T., Brault Julien, Damilano Benjamin, Vennegues Philippe, de Mierry Philippe, Massies Jean
Conference: GALLIUM NITRIDE MATERIALS AND DEVICES X (San Francisco, US, 2015) |
The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures Auteur(s): Rosales D., Ngo T. H., Valvin P., Lekhal K, Damilano B., Demierry P, Gil B., Bretagnon T. (Article) Publié: Superlattices And Microstructures, vol. 76 p.9 (2014) |
Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells Auteur(s): Rosales D., Gil B., Bretagnon T., Guizal B., Izyumskaya N, Monavarian M, Zhang F, Okur Serdal, Avrutin Vitaly, Ozgur Umit, Morkoc Hadis (Article) Publié: Journal Of Applied Physics, vol. 116 p.093517 (2014) |
Physics of Wurtzite Nitrides and Oxides Auteur(s): Gil B. Ouvrage: Springer (2014) 265p. |
Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structures Auteur(s): Lefebvre P., Brimont C., Valvin P., Gil B., Miyake H., Hiramatsu Kazumaza
Conference: International Conference on Nitride Semiconductors – ICNS10. (Washington DC, US, 2013-08-25) |
Determination of carrier diffusion length in p- and n-type GaN Auteur(s): Hafiz Shopan, Metzner Sebastian, Zhang Fan, Monaravian Mortezza, Avrutin Vitaly, Morkoc Hadis, Karbaum C, Bertram Frank, Christen Juergen, Gil B., Ozgur Umit
Conference: GALLIUM NITRIDE MATERIALS AND DEVICES IX (san francisco, FR, 2014-02-03) |