Cet article présente une maquette pédagogique analogique polyvalente permettant l’observation, la compréhension et la mise en œuvre de boucles de régulation pour l’électronique de puissance et la commande de machine à courant continu. Cette maquette est utilisée en Travaux Pratiques mais aussi en projet pour les Master EEA première et deuxième année, principalement dans le parcours Energie Electrique, Environnement et Fiabilité des systèmes (3EFS) du département EEA de l’Université de Montpellier. L’objectif pédagogique est la compréhension des systèmes régulés ou asservis en manipulant une maquette où les correcteurs peuvent être réglés avec des composants sur supports. L’utilisation de l’oscilloscope, l’étude des chaînes instrumentales (capteur plus filtre), l’étude statique et dynamique d’un convertisseur en électronique de puissance sont des manipulations très constructives pour les étudiants. Nous présenterons ici comme application de cette carte analogique l‘étude de la régulation d’une machine à courant continu à aimant.

Pure and Aluminum doped Zinc Oxide Nanoparticles (AZO NPs) with various doping concentrations were synthesized using an original aqueous chemical process under atmospheric pressure and moderate temperature, using only deionized water as a solvent with a filtration step followed by heat treatment.The X-Ray Diffraction (XRD), Raman and Field Emission Scanning Electron Microscopy- Energy-Dispersive X-ray Spectroscopy (FESEM-EDS) analysis of nanoparticles reveals a hexagonal wurtzite structure, with a size around 60 nm and the presence of aluminum in our samples. Optical investigations demonstrate that the material is of high quality, with few deep structural defects, since Photoluminescence (PL) is largely dominated by excitonic emission at low temperatures.

We report on the emission of Terahertz radiation from Landau quantized Dirac electrons in HgTe/CdHgTe based quantum wells. We show that this cyclotron emission is continuously tunable with magnetic field from 500 GHz up to 2.5 THz. Moreover, given the relativistic nature of charge carriers, the cyclotron mass and therefore the emitted frequency are also tunable with the electron density. These results pave the way for the long-awaited Landau laser which could additionally be tunable by a gate voltage with a fixed magnetic field.

We report on the effects of visible light on the low temperature electronic properties of the spinpolarized two dimensional electron system (2DES) formed at the interfaces between LaAlO 3 , EuTiO 3 and (001) SrTiO 3. A strong, persistent modulation of both longitudinal and transverse conductivity was obtained using light emitting diodes (LEDs) with emissions at different wavelengths in the visible spectrum range. In particular, Hall effect data show that visible light induces a non-volatile electron filling of bands with mainly 3d xz,yz character, and at the same time an enhancement of the anomalous Hall effect associated to the magnetic properties of the system. Accordingly, a suppression of the weak-anti localization corrections to the magneto-conductance is found, which correlates with an enhancement of the spin-polarization and of the ferromagnetic character of 2DES. The results establish the LED-induced photo-doping as a viable route for the control of the ground state properties of artificial spin-polarized oxide 2DES.

By using the self-consistent Born approximation, we investigate disorder effect induced by shortrange impurities on the band-gap of a seminal two-dimensional (2D) system, whose phase diagram contains trivial, single-band-inverted and double-band-inverted states. Following the density-ofstates (DOS) evolution, we demonstrate multiple closings and openings of the band-gap with the increase of the disorder strength. Calculations of the spectral function describing the quasiparticles at the Γ point of the Brillouin zone evidence that the observed band-gap behavior is unambiguously caused by the topological phase transitions due to the mutual inversions between the first and second electron-like and hole-like subbands. We also find that an increase in the disorder strength in the double-inverted state always leads to the band-gap closing due to the overlap of the tails of DOS from conduction and valence subbands.

Terahertz time-domain spectroscopy (THz-TDS) at room temperature and standard atmosphere pressure remains so far the backbone of THz photonics in numerous applications for civil and defense levels. Plasmonic microstructures and metasurfaces are particularly promising for improving THz spectroscopy techniques and developing biomedical and environmental sensors. Highly doped semiconductors are suitable for replacing the traditional plasmonic noble metals in the THz range. We present a perfect absorber structure based on semiconductor III-Sb epitaxial layers. The insulator layer is GaSb while the metal-like layers are Si doped InAsSb (∼ 5·10 19 cm -3 ). The doping is optically measured in the IR with polaritonic effects at the Brewster angle mode. Theoretically, the surface can be engineered in frequency selective absorption array areas of an extensive THz region from 1.0 to 6.0 THz. The technological process is based on a single resist layer used as hard mask in dry etching defined by electron beam lithography. A wide 1350 GHz cumulative bandwidth experimental absorption is measured in THz-TDS between 1.0 and 2.5 THz, only limited by the air-exposed reflectance configuration. These results pave the way to implement finely tuned selective surfaces based on semiconductors to enhance light-matter interaction in the THz region.