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Optique des états collectifs et du spin
(4) Production(s) de l'année 2022
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Analysis and modeling of polaritonic gain in GaN ridge polariton lasers 
Auteur(s): Souissi H., Gromovyi M, Gueye T, Brimont C., Doyennette L., Solnyshkov D, Malpuech G, Cambril E, Bouchoule S, Alloing B, Rennesson S, Semond F, Zúñiga-Pérez J, Guillet T.
Conference: Physics of Light-Matter Coupling in Nanostructures PLMCN (Varadero, CU, 2022-04-11)
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Ridge polariton laser: towards a short laser on chip for integration
Auteur(s): Souissi H., Gromovyi M, Gueye T, Brimont C., Doyennette L., Solnyshkov D, Malpuech G, Cambril E, Bouchoule S, Alloing B, Rennesson S, Semond F, Zuniga-Perez J, Guillet T.
Conference: International Workshop on Nitride Semiconductors IWN (Berlin, DE, 2022-10-10)
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Vector vortex solitons and soliton control in vertical-cavity surface-emitting lasers
Auteur(s): Ackemann T., Guillet T. , Pulham H., Oppo G.L.
Chapître d'ouvrage: Dissipative Optical Solitons, vol. 238 p.273 (2022)
Texte intégral en Openaccess : 
Ref HAL: hal-03851155_v1
Ref Arxiv: 2106.05226
DOI: 10.1007/978-3-030-97493-0
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé: The properties of vector vortex beams in vertical-cavity-surface emitting lasers with frequency-selective feedback is investigated. They are interpreted as high-order vortex solitons with a spatially non-uniform, but locally linear polarization state. In contrast to most schemes to obtain vector vortex beams relying on imprinting the polarization structure, vector vortex solitons form spontaneously due to the near polarization degeneracy in vertical-cavity devices. We observe radially, hyperbolic and spiral polarization configurations depending on small residual anisotropies in the system and multi-stability between different states. In addition, we demonstrate flip-flop operation of laser solitons via in principle local electronic nonlinearities. Combining the two themes might open up a route for a simple device enabling fast switching between different vector vortex beams for applications. The investigations connect nicely the fields of nonlinear science, singular optics, structured light and semiconductor laser technology.
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Electrical control of excitons in GaN/(Al,Ga)N quantum wells
Auteur(s): Aristegui R., Chiaruttini F., Jouault B., Lefebvre P., Brimont C., Guillet T., Vladimirova M., Chenot S., Cordier Yvon, Damilano Benjamin
(Document sans référence bibliographique) Texte intégral en Openaccess :
Ref HAL: hal-03621796_v1
Ref Arxiv: 2203.13761
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé: A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photoluminescence and photo-induced current, we demonstrate that exciton density in the trap can be controlled via an external electric bias, which is capable of altering the trap depth. Application of a negative bias deepens the trapping potential, but does not lead to any additional accumulation of excitons in the trap. This is due to exciton dissociation instigated by the lateral electric field at the electrode edges. The resulting carrier losses are detected as an increased photo-current and reduced photoluminescence intensity. By contrast, application of a positive bias washes out the electrode-induced trapping potential. Thus, excitons get released from the trap and recover free propagation in the plane that we reveal by spatially-resolved photoluminescence.
Commentaires: 12 pages, 14 figures
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