Although AI-enabled customer relationship management (CRM) systems have gained momentum in healthcare to enhance performance, there is a striking dearth of knowledge on how such capabilities are formed and affect service innovation. The study adopted a mixed-method approach to investigate the underlying phenomena. This research infused resource-based theory, dynamic capability theory, and theory of productivity paradox to investigate how healthcare in India acquires AI-enabled CRM capabilities and enhances service innovation. We identified the facets of AI-enabled CRM capabilities using a case study and developed a framework for AI-enabled CRM capability and service innovation. This study noticed that customer service flexibility (CSF) is a missing link in this relationship. The findings of the quantitative study employing PLS-SEM reveal the linear relationships between AI-enabled CRM capability, CSF, and service innovation. This study explains the formation of AI-enabled CRM capabilities to fill the research gap and direct innovative performance in healthcare, which is an immediate need to sustain in a volatile environment. This study provides theoretical implications to enhance the research stream and practical implications for decision-makers. \textcopyright 2022 Elsevier Ltd

The boron-vacancy spin defect (V − B) in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale proximity to the quantum sensing layer. Here, we apply first principles calculations to determine the coupling of the V − B electronic spin to strain and electric fields. Our work unravels the interplay between local piezoelectric and elastic effects contributing to the final response to the electric fields. The theoretical predictions are then used to analyse optically detected magnetic resonance (ODMR) spectra recorded on hBN crystals containing different densities of V − B centres. We prove that the orthorhombic zero-field splitting parameter results from local electric fields produced by surrounding charge defects. By providing calculations of the spin-strain and spin-electric field couplings, this work paves the way towards applications of V − B centres for quantitative electric field imaging and quantum sensing under pressure.

Despite the considerable interest for antiferromagnets that appeared with the perspective of using them for spintronics, their experimental study, including the imaging of antiferromagnetic textures, remains a challenge. To address this issue, quantum sensors, and, in particular, the nitrogen-vacancy (NV) defects in diamond have become a widespread technical solution. We review here the recent applications of single NV centers to study a large variety of antiferromagnetic materials, from quantitative imaging of antiferromagnetic domains and non-collinear states, to the detection of spin waves confined in antiferromagnetic textures and the non-perturbative measurement of spin transport properties. We conclude with recent developments improving further the magnetic sensitivity of scanning NV microscopy, opening the way to detailed investigations of the internal texture of antiferromagnetic objects.

Nanoporous GaN layers were fabricated using selective area sublimation through a self-organized AlN nanomask in a molecular beam epitaxy reactor. The obtained pore morphology, density and size were measured using plan-view and cross-section scanning electron microscopy experiments. It was found that the porosity of the GaN layers could be adjusted from 0.04 to 0.9 by changing the AlN nanomask thickness and sublimation conditions. The room temperature photoluminescence properties as a function of the porosity were analysed. In particular, a strong improvement (>100) of the room temperature photoluminescence intensity was observed for porous GaN layers with a porosity in the 0.4–0.65 range. The characteristics of these porous layers were compared to those obtained with a Si$_x$ N$_y$ nanomask. Furthermore, the regrowth of p-type GaN on light emitting diode structures made porous by using either an AlN or a Si$_x$ N$_y$ nanomask were compared.

In the room-temperature magnetoelectric multiferroic, BiFeO3, the non-collinear antiferromagnetic state is coupled to the ferroelectric order, opening applications for low-power electric-field-controlled magnetic devices. While several strategies have been explored to simplify the ferroelectric landscape, here we directly stabilize a single domain ferroelectric and spin cycloid state in epitaxial BiFeO3(111) thin films grown on orthorhombic DyScO3(011). Comparing with films grown on SrTiO3(111), we identify anisotropic in-plane strain as a powerful handle to tailor the single antiferromagnetic state. In this single domain multiferroic state, we establish the thickness limit of the coexisting electric and magnetic orders and directly visualize the suppression of the spin cycloid induced by the magnetoelectric interaction below the ultrathin limit of 1.4 nanometers. This as-grown single domain multiferroic configuration in BiFeO3 thin films opens an avenue both for fundamental investigations and for electrically-controlled non-collinear antiferromagnetic spintronics.