The overlap, or similarity, between liquid configurations is at the core of the mean-field description of the glass transition, and remains a useful concept when studying three-dimensional glass-forming liquids. In liquids, however, the overlap involves a tolerance, typically of a fraction $a/\sigma$ of the inter-particle distance, associated with how precisely similar two configurations must be for belonging to the same physically relevant "state". Here, we systematically investigate the dependence of the overlap fluctuations and of the resulting phase diagram when the tolerance is varied over a large range. We show that while the location of the dynamical and thermodynamic glass transition (if present) are independent of $a/\sigma$, that of the critical point associated with a transition between a low- and a high-overlap phases in the presence of an applied source nontrivially depends on the value of $a/\sigma$. We rationalize our findings by using liquid-state theory and the hypernetted chain (HNC) approximation for correlation functions. In addition, we confirm the theoretical trends by studying a three-dimensional glass-former by computer simulations. We show in particular that a specific choice of $a/\sigma$ maximizes the temperature of the critical point, pushing it up in a liquid region where viscosity is low and computer investigations are easier due to a significantly faster equilibration.

Aim of investigation is to study the possibility of activating a promising Ni(OH)2, prepared using two-step high-temperature synthesis, by adding 3%, 5% and 10% (mol.) Al3+ to Ni2+. For describing the intercalation of Al3+ into hydroxide structure, "Separate-Solid—Liquid—Solid" mechanism, which included the formation of separate Al-containing phase on synthesis stage, and incorporation of Al3+ into Ni(OH)2 or formation of surface compounds during hydrolysis stage, has been proposed. EDX analysis of precursor confirmed the formation of separate Al-containing phases. By means of PXRD, EDX, SEM, TEM revealed realization of both ways of Al3+ incorporation: at high amounts of Al3+ (5% and 10% mol.), predominantly surface compounds are formed with distorted and altered particle shape and appearance of "core–shell" particles. At low amounts of Al3+ (3% mol.), permeably doping occurs, with partial intercalation of Al3+ into the nickel hydroxide structure. Based on CVA and GCDC results, Al3+ acts as a poison upon the formation of surface compounds have been found. Upon doping of hot hydrolysis samples with aluminum, sample activation was observed, which resulted in an increase of specific capacity by 1.99 times, from 569 Fg−1 (pure Ni(OH)2) to 1112 Fg−1.

Black phosphorus (BP), as a two-dimensional material, has exhibited unique optoelectronic properties due to its anisotropic plasmons. In the present work, we theoretically propose a radiative thermal switch (RTS) composed of BP gratings in the context of near-field radiative heat transfer. The simply mechanical rotation between the gratings enables considerable modulation of radiative heat flux, especially when combined with the use of non-identical parameters, i.e., filling factors and electron densities of BP. Among all the cases including asymmetric BP gratings, symmetric BP gratings, and BP films, we find that the asymmetric BP gratings possess the most excellent switching performance. The optimized switching factors can be as high as 90% with the vacuum separation d=50 nm and higher than 70% even in the far-field regime d=1 µm. The high-performance switching is basically attributed to the rotatable-tunable anisotropic BP plasmons between the asymmetric gratings. Moreover, due to the twisting principle, the RTS can work at a wide range of temperature, which has great advantage over the phase change materials-based RTS. The proposed switching scheme has great significance for the applications in optoelectronic devices and thermal circuits.

The UV community for the fourth time took part in the International Workshop on Ultraviolet Materials and Devices (IWUMD4), which was organized in September 2019 by the Ioffe Institute, St. Petersburg, Russia. This event, following the successful meetings in Beijing, China (2016), Fukuoka, Japan (2017), Kunming, China (2018), was intended to show new horizons beyond the UV-blue LEDs based on wide-bandgap III-Nitrides. Material science, modeling and technology for the “UV gap” (200-300 nm) are at the frontier of applied physics. The studies are aimed at developing devices for such areas as medicine – for human-safely disinfection and rapid detection of viral threats, communication – for noise-protected and solar- blind UV-optical communication, nanotechnology – for high- resolution photolithography and for many other applications in the field of biology, pharmaceuticals and forensics.The Workshop was attended by 125 scientists from 15 coun- tries, including half from Asia and half from Europe and theDOI: 10.1002/pssa.202000378USA. The Program was very eventful and included 2 plenary talks by Prof. Chris G. Van de Walle (UCSB) and Prof. Michael Kneissl (TU Berlin&FBH), 4 keynotes, and 25 invited papers, as well as 35 oral presentations and 36 poster contributions displayed during two poster sessions. Prior to Workshop, the Tutorials on the basic properties of wide-gap semiconductor materials and nanostructures with lectures of outstanding experts in this field were held for one and a half days. The scope of the presentations at the Workshop was quite wide. Besides the fundamental properties of wide-gap semiconductor materials and nanostructures, their optical and structural characterization and applications, it highlighted new trends, such as the growth, basic properties and applications of Ga2O3 and physics of BN from bulk to 2D materials.This issue features selected reports from the Workshop participants. Recent results on the manufacture of high-quality templates of the nitrides and oxides by using differenttechnological approaches are presented. The fundamental problems of low-dimensional heterostructures and the techno- logical challenges of various epitaxial growth methods, such as molecular beam epitaxy and metalorganic chemical vapor deposition, are examined in detail to further improve the quan- tum efficiency and output power of UV light-emitting devices. A study of the optical properties of AlGaN layers and laser diode heterostructures are presented, which elucidate the nature and characteristics of spontaneous and stimulated emis- sions in AlGaN laser structures. In addition, the fabrication and radiation of GaN hexagonal microcavities are discussed. A variety of topics reflects the wide range of interests of the Workshop.The Editors would like to thank all the members of the International Advisory and Program Committees for their encouragement and great help during the Workshoporganization. We are grateful to the referees for their efforts and time devoted to the paper review process. We owe our best thanks to the official partners and sponsors of the workshop, as well as all participants at the symposium exhibition. Finally, we would like to express our sincere gratitude to Dr. Stefan Hildebrandt and the production team of physica status solidi for their friendly assistance and collaboration in the editorial process.The next 5th International Workshop on Ultraviolet Materials and Devices (IWUMD5) is planned to be held in November 2020 in Jeju, Korea. We wish the organizers a gorgeous and successful meeting.

We consider thermal machines powered by locally equilibrium reservoirs that share classical or quantum correlations. The reservoirs are modeled by the so-called collisional model or repeated interactions model. In our framework, two reservoir particles, initially prepared in a thermal state, are correlated through a unitary transformation and afterward interact locally with the two quantum subsystems which form the working fluid. For a particular class of unitaries, we show how the transformation applied to the reservoir particles affects the amount of heat transferred and the work produced. We then compute the distribution of heat and work when the unitary is chosen randomly, proving that the total swap transformation is the optimal one. Finally, we analyze the performance of the machines in terms of classical and quantum correlations established among the microscopic constituents of the machine.

We investigated quantum Hall states in an inverted HgTe quantum well (QW) close to the critical thickness using transconductance fluctuation (TF) measurements. In the conduction band, several integer quantum Hall states were observed, corresponding to filling factors ν=1,2,3,4. For magnetic fields above 2 T, quantum Hall states ν=0 were observed in the normal gap. These observations agreed well with the previous studies of quantum Hall states on GaAs QWs and graphene. Interestingly, TFs corresponding to anomalous positive filling factor ν were clearly observed in the valence band. We attribute the emergence of those TFs to the localization and charging of the heavy holes located in the side maxima of the valence band.

We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photoconductivity effect. This is striking evidence that in addition to the already well-documented crystalline and interface asymmetries, electron-electron interactions also have a significant impact on the usual behavior of the optical transitions from zero mode Landau levels.