Ref HAL: hal-04525413_v1
Ref Arxiv: 2403.17593
Ref. & Cit.: NASA ADS
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Nuclear magnetic resonance (NMR) is particularly relevant for studies of internuclear spin coupling at zero and ultra-low fields (ZULF), where spin-spin interactions dominate over Zeeman ones. Here we report on ZULF NMR in CdTe. In this semiconductor all magnetic isotopes have spin $I = 1/2$, so that internuclear interactions are never overshadowed by quadrupole effects. Our experiments rely on warm-up spectroscopy, a technique that combines optical pumping, additional cooling via adiabatic demagnetisation, and detection of the oscillating magnetic field-induced warm-up of the nuclear spin system via Hanle effect. We show that NMR spectra exhibit a rich fine structure, consistent with the low abundance of magnetic isotopes in CdTe, their zero quadrupole moments, as well as direct and indirect interactions between them. A model assuming that the electromagnetic radiation is absorbed by nuclear spin clusters composed of up to 5 magnetic isotopes allows us to reproduce the shape of a major part of the measured spectra.

Commentaires: 9 pages, 7 figures, 2 tables

Ref HAL: hal-03621796_v1
Ref Arxiv: 2203.13761
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A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photoluminescence and photo-induced current, we demonstrate that exciton density in the trap can be controlled via an external electric bias, which is capable of altering the trap depth. Application of a negative bias deepens the trapping potential, but does not lead to any additional accumulation of excitons in the trap. This is due to exciton dissociation instigated by the lateral electric field at the electrode edges. The resulting carrier losses are detected as an increased photo-current and reduced photoluminescence intensity. By contrast, application of a positive bias washes out the electrode-induced trapping potential. Thus, excitons get released from the trap and recover free propagation in the plane that we reveal by spatially-resolved photoluminescence.

Commentaires: 12 pages, 14 figures

DOI: 10.1103/PhysRevB.104.235201
WoS: WOS:000733570400001
Résumé:

The efficiency of the adiabatic demagnetization of the nuclear spin system (NSS) of a solid is limited, if quadrupole effects are present. Nevertheless, despite a considerable quadrupole interaction, recent experiments validated the thermodynamic description of the NSS in GaAs. This suggests that nuclear spin temperature can be used as a probe of nuclear magnetic resonances. We implement this idea by analyzing the modification of the NSS temperature in response to an oscillating magnetic field at various frequencies, an approach termed as the warm-up spectroscopy. It is tested in a n-GaAs sample where both mechanical strain and built-in electric field may contribute to the quadrupole splitting, yielding the parameters of electric field gradient tensors for 75As and both Ga isotopes, 69Ga and 71Ga.

Ref HAL: hal-03447203_v1
Ref Arxiv: 2105.03972
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé:

The efficiency of the adiabatic demagnetization of nuclear spin system (NSS) of a solid is limited, if quadrupole effects are present. Nevertheless, despite a considerable quadrupole interaction, recent experiments validated the thermodynamic description of the NSS in GaAs. This suggests that nuclear spin temperature can be used as the universal indicator of the NSS state in presence of external perturbations. We implement this idea by analyzing the modification of the NSS temperature in response to an oscillating magnetic field at various frequencies, an approach termed as the warm-up spectroscopy. It is tested in a n-GaAs sample where both mechanical strain and built-in electric field may contribute to the quadrupole splitting, yielding the parameters of electric field gradient tensors for 75As and both Ga isotopes, 69Ga and 71Ga.

Commentaires: 12 pages, 9 figures

Ref HAL: hal-03246864_v1
DOI: 10.1103/PhysRevB.103.205207
WoS: 000655888700004
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4 Citations
Résumé:

Nuclear magnetism inn-doped semiconductors with a positive hyperfine constant is revisited. Two kindsof nuclear magnetic ordering can be induced by resident electrons in a deeply cooled nuclear spin system.At positive nuclear spin temperature below a critical value, randomly oriented nuclear spin polarons similarto that predicted by Merkulov [Phys. Solid State40, 930 (1998)] should emerge. These polarons are orientedrandomly, and within each polaron, nuclear and electron spins are aligned antiferromagnetically. At negativenuclear spin temperature below a critical value, we predict another type of magnetic ordering—a dynamicallyinduced nuclear ferromagnet. This is a long-range ferromagnetically ordered state involving both electrons andnuclei. It can form if electron spin relaxation is dominated by the hyperfine coupling, rather than by the spin-orbitinteraction. Application of the theory to then-doped GaAs suggests that ferromagnetic order may be reached atexperimentally achievable nuclear spin temperatureN≈−0.5μK and lattice temperatureTL≈5K.

Ref HAL: hal-02466887_v1
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Dipolar, or indirect excitons (IXs) offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of such excitons. Indeed, compared to their counterparts in GaAs-based heterostructures, IXs in nitrides possess two key advantages. They have higher binding energies, and they are “naturally” indirect. This means, that they can be engineered and manipulated in as-grown heterostructures, even without application of an external electric bias. In this work we demonstrate (i) the propagation of IXs over hundreds of micrometers in the plane of GaN/(AlGa)N quantum wells, (ii) confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface (iii) the electrical control of the IX fluxes via an applied gate voltage. Once confined, the exciton fluid accumulates in uniform zones. By modeling the emission spectra of these zones, we get insight into the thermodynamic properties of the thermalized exciton fluid. These results constitute a prerequisite for realization of the GaN-based excitonic devices, as well for studies of the complex phase diagram of these dipolar bosons at low temperature.

Ref HAL: hal-02466858_v1
Exporter : BibTex | endNote
Résumé:

Dipolar, or indirect excitons (IXs) offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of such excitons. Indeed, compared to their counterparts in GaAs-based heterostructures, IXs in nitrides possess two key advantages. They have higher binding energies, and they are “naturally” indirect. This means, that they can be engineered and manipulated in as-grown heterostructures UP TO ROOM TEMPERATURES, even without application of an external electric bias. In this work we demonstrate (i) the propagation of IXs over hundreds of micrometers in the plane of GaN/(AlGa)N quantum wells, (ii) confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface (iii) the electrical control of the IX fluxes via an applied gate voltage. These results constitute a prerequisite for realization of the GaN-based excitonic devices, as well for studies of the complex phase diagram of these dipolar bosons at low temperature.