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(49) Production(s) de HUNTZINGER J.-R.
Electrical monitoring of organic crystal phase transition using MoS2 field effect transistor Auteur(s): Boulet Ilan, Pascal Simon, Bedu F., Ozerov Igor, Ranguis Alain, Leoni Thomas, Becker Conrad, Masson Laurence, Matkovic Aleksandar, Tiechert Christian, Siri Olivier, Huntzinger J.-R., Paillet M., Zahab A. A., Parret R.
Conference: EMRS Fall Meeting (Warsaw, PL, 2022-09) |
Electrical monitoring of organic crystal phase transition using MoS2 field effect transistor Auteur(s): Boulet Ilan, Pascal Simon, Bedu F., Ozerov Igor, Ranguis Alain, Leoni Thomas, Becker Conrad, Masson Laurence, Matković Aleksandar, Tiechert Christian, Siri Olivier, Huntzinger J.-R., Paillet M., Zahab A. A., Parret R.
Conference: Meeting on Nanosciences Advances (MNA 2022) (Porquerolles, FR, 2022-09) |
Buffer layers inhomogeneity and coupling with epitaxial graphene unravelled by Raman scattering and graphene peeling Auteur(s): Wang T., Huntzinger J.-R., Bayle M., Roblin C., Decams Jean-Manuel, Zahab A. A., Contreras S., Paillet M., Landois P. (Article) Publié: Carbon, vol. 163 p.224-233 (2020) Texte intégral en Openaccess : |
Sublimation de carbure de silicium : de la couche tampon à la monocouche de graphène Auteur(s): Landois P., Huntzinger J.-R., Wang T., Bayle M., Jouault B., Zahab A. A., Paillet M., Contreras S.
Conférence invité: Congrès annuel SFEC (Samatan, FR, 2020-04-23) |
Epitaxial graphene growth and characterisation of buffer layer on SiC(0001) Auteur(s): Wang T., Huntzinger J.-R., Decams Jean-Manuel, Bayle M., Zahab A. A., Jouault B., Contreras S., Paillet M., Landois P.
Conference: 2D materials on substrates: growth & properties (Villard de Lans, FR, 2020-01-19) |
Restoring self-limited growth of single-layer graphene on copper foil via backside coating Auteur(s): Reckinger Nicolas, Casa Marcello, Scheerder Jeroen E., Keijers Wout, Paillet M., Huntzinger J.-R., Haye Emile, Felten Alexandre, van de Vondel Joris, Sarno Maria, Henrard Luc, Colomer Jean-Francois (Article) Publié: Nanoscale, vol. 11 p.5094-5101 (2019) Texte intégral en Openaccess : |
Structural and electronic properties of epitaxial graphene grown on SiC (0001) at low argon pressure Auteur(s): Wang T., Landois P., Bayle M., Huntzinger J.-R., De cecco Alessandro, Courtois Hervé, Winkelmann Clemens, Paillet M., Jouault B., Contreras S. (Affiches/Poster) International Conference on the physics semiconductors (Montpellier, FR), 2018-07-30 |