Electrical transport properties in (111) growth-axis GaAlAs/GaInAs heterostructures Auteur(s): Konczewicz L., Jouault B., Contreras S., Sadowski Ml, Robert Jean-Louis, Blanc S., Fontaine C. (Article) Publié: Physica Status Solidi B, vol. 223 p.507-512 (2001) Ref HAL: hal-00544463_v1 Exporter : BibTex | endNote Résumé: The effect of an internal piezoelectric field on electrical transport phenomena has been studied in GaAlAs/GaInAs heterostructures grown on (001) and (111)B GaAs substrates. The two-dimensional electron gas (2DEG) in the structure was obtained by conventional modulation delta -doping in the barrier layer. The: conductivity and Nail effect were studied at room temperature as a function of hydrostatic pressures up to 1000 MPa. The observed pressure changes of the 2DEG concentration have been compared with theoretical predictions, taking into account the strain-induced electric fields in the barrier layer. The piezoresistive behaviour under uniaxial stress has also been determined. It was found that piezo-effects are more pronounced in the case of the material with the built-in piezoelectric field. |