Auteur(s): Robert Jean-louis, Contreras S., Camassel J., Pernot J., Juillaguet S., Di Cioccio L., Billon T.
Conference: International Conference on Silicon Carbide and Related Materials (TSUKUBA (JAPAN), FR, 2001-10-28)
Actes de conférence: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, vol. 389-3 p.1435-1438 (2002)
Ref HAL: hal-00543769_v1
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Résumé:
We report electrical and optical measurements performed on low-doped, n-type 4H-SiC. We show that below a typical carrier concentration of similar to5 10(15) cm(-3) at room temperature, they work in the so-called exhaustion regime from 300 K. The carrier concentration remains constant and the resistivity increases linearly at a rate of 3400 ppm/K from 500 to 800 K. This establishes low doped SiC as a good candidate to produce high performance Hall sensors, working in harsh environment, with a large sensitivity and a low thermal drift.