Process-induced strain in silicon-on-insulator materials Auteur(s): Tiberj A., Fraisse B., Blanc C., Contreras S., Camassel J.
Conference: Conference on Extended Defects in Semiconductors (EDS 2002) (BOLOGNA (ITALY), FR, 2002-06-01) Ref HAL: hal-00543870_v1 Exporter : BibTex | endNote Résumé: We present a detailed investigation of the influence of oxidation and thinning processes on the in-plane stress in silicon-on-insulator materials. Combining double x-ray diffraction, Fourier transformed infrared and micro-Raman spectroscopy, we show that one can separately evaluate the stress present in the silicon over layer, the buried oxide and the underlying (handle) silicon wafer at any time of a device-forming process. |