Auteur(s): Diakonova N., Rumyantsev S., Shur M.S., Meziani M., Pascal F., Hoffmann A., Fareed Q., Bilenko Yu., Gaska R., Knap W.
(Article) Publié: Physica Status Solidi A, vol. 202 p.677-679 (2005)
Ref HAL: hal-00328659_v1
Exporter : BibTex | endNote
Résumé:
The influence of strong magnetic field on the 1/f noise in AlGaN/GaN metal-oxide-Semiconductor heterostructure field effect transistors (MOSHFETs) has been studied. The independence of 1/f noise on the magnetic fields up to 10 T where the strong geometric magneto-resistance has been observed, shows that the carrier number fluctuations is the dominant mechanism of the noise in these devices.