Growth and properties of Indium nitride thin films and InN nanostructures Auteur(s): Briot O., Ruffenach S., Gil B.
Conference: 18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society (Sydney (AUSTRALIA), AU, 2005-10-22) Ref HAL: hal-00390131_v1 Exporter : BibTex | endNote Résumé: The growth of indium nitride quantum dots are studied. An investigation of the dot built-in strain, at the nanometric scale, performed using the synchrotron radiation is presented. These results are correlated with transmission electron microscopy images showing the dot structure. From these results, together with a thermodynamical analysis, it is shown that the dot growth mechanism is not the usual Stranski-Krastanov growth mode, but is more related to the BCF (Burton Cabrera Franck) growth mode. |