Ref HAL: hal-00540639_v1
DOI: 10.1063/1.2005394
WoS: 000230886100037
Exporter : BibTex | endNote
140 Citations
Résumé:

We report on room-temperature, resonant detection of 0.6 THz radiation by 250 nm gate length GaAs/AlGaAs heterostructure field-effect transistor. We show that the detection is strongly increased (and becomes resonant) when the drain current increases and the transistor is driven into the current saturation region. We interpret the results as due to resonant plasma wave detection that is enhanced by increasing the electron drift velocity. (c) 2005 American Institute of Physics.