--------------------
- Terahertz generation by plasma waves in nanometer gate high electron mobility transistors doi link

Auteur(s): Lusakowski J, Teppe F., Diakonova N., Meziani Ym, Knap W., Parenty T, Bollaert S, Cappy A, Popov V, Shur Ms

(Article) Publié: Physica Status Solidi A, vol. 202 p.656-659 (2005)
Texte intégral en Openaccess : istex


Ref HAL: hal-00540643_v1
DOI: 10.1002/pssa.200460468
WoS: 000228522300034
Exporter : BibTex | endNote
7 Citations
Résumé:

A resonant voltage tuneable radiation (0.4 THz-1.0 THz) from the gated two dimensional electron gas in a 60 nm InGaAs field effect transistor was investigated. We show that (i) the observed emission appears once the drain-to-source voltage, U-DS, exceeds the threshold value, U-TH; (ii) the resonant frequency can be tuned by U,,, in agreement with the current driven plasma instability model of Dyakonov and Shur; (iii) by applying a quantizing magnetic field one increases U-TH linearly with the magnetic field while the evolution of the emission signal is approximately a universal function of (U-DS - U-TH). (c) 2005 WILEY-VCH Verlag GmbH A Co. KGaA, Weinheim.