Auteur(s): Ghali M., Kossut J., Janik E., Teppe F., Vladimirova M., Scalbert D.
Conference: 27th International Conference on the Physics of Semiconductors (ICPS-27) (Flagstaff (AZ), FR, 2004-07-26)
Actes de conférence: Physics of Semiconductors, Pts A and B, vol. 772 p.1383-1384 (2005)
Ref HAL: hal-00541591_v1
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Résumé:
Transverse electron and hole spin relaxation times were measured in both parts of a generic spintronic structure device consisting of two thin layers: diluted magnetic Cd0.96Mn0.04Te (spin aligner) and a layer non-magnetic CdTe (spin accumulator). By using time-resolved magnetoptical Kerr rotation as a fast time-resolved magnetization probe, we find that the carriers in Cd0.96Mn0.04Te lose their initial spin coherence within similar to 1ps. The undoped spin accumulator is characterized by relatively long electron spin relaxation time that of the order of several hundreds ps.