Auteur(s): Pernot J., Contreras S., Camassel J., Robert Jean-louis
Conference: 5th European Conference on Silicon Carbide and Related Materials (Bologna (ITALY), FR, 2004-08-31)
Actes de conférence: SILICON CARBIDE AND RELATED MATERIALS 2004, vol. 483 p.401-404 (2005)
Ref HAL: hal-00543771_v1
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Résumé:
We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 ± 10 %) with apparition of a large number of compensating centres in the implanted layers.