Auteur(s): Lorenzini P., Bougrioua Z., Tiberj A., Tauk R., Azize M., Sakowicz M., Karpierz K., Knap W.
(Article) Publié: Applied Physics Letters, vol. 87 p.232107 (2005)
Ref HAL: hal-00543864_v1
DOI: 10.1063/1.2140880
WoS: 000233723200045
Exporter : BibTex | endNote
16 Citations
Résumé:
The transport and quantum lifetimes were respectively deduced from low-temperature mobility and Shubnikov-de Haas measurements as a function of carrier density in metal organic vapor phase epitaxy-grown AlGaN/GaN/sapphire heterostructures. We show experimentally that the lifetime ratio varies as a bell curve, qualitatively confirming a recent theoretical prediction. However the experimental ratio varied much less than was theoretically predicted: From 9 to 19 for carrier densities in 1-9x10(12) cm(-2) range. Moreover, we show the variation of quantum time with carrier density presents some discrepancy with the theoretical study. We also show that transport to quantum lifetime ratio cannot be used alone as a clear figure of merit from AlGaN/GaN heterojunctions. (c) 2005 Americian Institute of Physics.