Auteur(s): Knap W.
Conférence invité: European Workshop on III-Nitride semiconductor Material and devices, (Heraklion, GR, 2006)
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Terahertz Plasma Wave Devices based on GaN high electron mobility transistors Auteur(s): Knap W.
Conférence invité: European Workshop on III-Nitride semiconductor Material and devices, (Heraklion, GR, 2006) |