Effect of holes on the dynamic polarization of nuclei in semiconductors Auteur(s): Brunetti Adalberto, Vladimirova M., Scalbert D., Folliot Hervé, Le Corre Alain (Article) Publié: Physical Review B, vol. 73 p.121202 (2006) Ref HAL: hal-00440491_v1 DOI: 10.1103/PhysRevB.73.121202 WoS: 000236467400005 Exporter : BibTex | endNote 7 Citations Résumé: In semiconductors optically enhanced polarization of nuclei is known to be primarily due to photoexcited electrons. We show that holes play a role in this process via the spin-dependent recombination of the carriers. Our results are obtained in n-type InP where spin-dependent recombination leads to the inversion of the nuclear field direction due to the donor spins cooling under optical excitation. |