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- Effect of holes on the dynamic polarization of nuclei in semiconductors doi link

Auteur(s): Brunetti Adalberto, Vladimirova M., Scalbert D., Folliot Hervé, Le Corre Alain

(Article) Publié: Physical Review B, vol. 73 p.121202 (2006)


Ref HAL: hal-00440491_v1
DOI: 10.1103/PhysRevB.73.121202
WoS: 000236467400005
Exporter : BibTex | endNote
7 Citations
Résumé:

In semiconductors optically enhanced polarization of nuclei is known to be primarily due to photoexcited electrons. We show that holes play a role in this process via the spin-dependent recombination of the carriers. Our results are obtained in n-type InP where spin-dependent recombination leads to the inversion of the nuclear field direction due to the donor spins cooling under optical excitation.