Auteur(s): El Fatimy A., Teppe F., Diakonova N., Knap W., Seliuta D., Valusis G., Shchepetov A., Roelens Y., Bollaert S., Cappy A., Rumyantsev S.
(Article) Publié: Applied Physics Letters, vol. 89 p.131926 (2006)
Ref HAL: hal-00540634_v1
DOI: 10.1063/1.2358816
WoS: 000240875800056
Exporter : BibTex | endNote
181 Citations
Résumé:
The authors report on detection of terahertz radiation by high electron mobility nanometer InGaAs/AlInAs transistors. The photovoltaic type of response was observed at the 1.8-3.1 THz frequency range, which is far above the cutoff frequency of the transistors. The experiments were performed in the temperature range from 10 to 80 K. The resonant response was observed and was found to be tunable by the gate voltage. The resonances were interpreted as plasma wave excitations in the gated two-dimensional electron gas. The minimum noise equivalent power was estimated, showing possible application of these transistors in sensing of terahertz radiation. (c) 2006 American Institute of Physics.