- Terahertz detection by GaN/AlGaN transistors doi link

Auteur(s): El Fatimy A., Boubanga tombet Stephane, Teppe F., Knap W., Veksler D. b., Rumyantsev S., Shur M. s., Pala N., Gaska R., Fareed Q., Hu X., Seliuta D., Valusis G., Gaquiere C., Theron D., Cappy A.

(Article) Publié: Electronics Letters, vol. 42 p.1342-1344 (2006)

Ref HAL: hal-00540638_v1
DOI: 10.1049/cl:20062452
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Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5 THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300 K For the lowest temperatures, a resonant response was observed. The resonances were interpreted as plasma wave excitations in gated two-dimensional electron gas. Non-resonant detection was observed at temperatures above 100 K. Estimates for noise equivalent power show that these transistors can be used as efficient detectors of terahertz radiation at cryogenic and room temperatures.