--------------------
- Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power doi link

Auteur(s): Tauk R., Teppe F., Boubanga tombet Stephane, Coquillat D., Knap W., Meziani Y. M., Gallon C., Boeuf F., Skotnicki T., Fenouillet-Beranger C., Maude D. K., Rumyantsev S., Shur M. S.

(Article) Publié: Applied Physics Letters, vol. 89 p.253511 (2006)


Ref HAL: hal-00541599_v1
DOI: 10.1063/1.2410215
WoS: 000243415200116
Exporter : BibTex | endNote
278 Citations
Résumé:

Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300 nm have been studied as room temperature plasma wave detectors of 0.7 THz electromagnetic radiation. In agreement with the plasma wave detection theory, the response was found to depend on the gate length and the gate bias. The obtained values of responsivity (<= 200 V/W) and noise equivalent power (>= 10(-10) W/Hz(0.5)) demonstrate the potential of Si MOSFETs as sensitive detectors of terahertz radiation. (c) 2006 American Institute of Physics.