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- Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids doi link

Auteur(s): Coquillat D., Le vassor d'yerville Marine, A. Boubanga Tombet S., Liu C., Bejtka K., Watson I.M., Edwards P.R., Martin R.W., Chong H.M.H., De La Rue R.M.

Conference: 6th International Symposium on Blue Laser and Light Emitting Diodes (Montpellier, FR, 2006-05-15)
Actes de conférence: Physica Status Solidi C, vol. 4 p.95-99 (2007)
Texte intégral en Openaccess : istex


Ref HAL: hal-00390557_v1
DOI: 10.1002/pssc.200673561
WoS: 000245874000023
Exporter : BibTex | endNote
2 Citations
Résumé:

Selective area growth offers the promise of producing III-nitride photonic crystals (PhCs) without dry etching and concomitant surface damage. Two PhC structures were studied, one comprising an array of flat-topped GaN micropyramids with micrometre-scale periodicity, and the other made up of sharp-tipped pyramids with sub-micrometre periodicity. Angularly resolved reflection and transmission measurements revealed the presence of sharp resonances associated with resonant Bloch modes. As a result, the photonic band structure was determined along symmetry directions of the reciprocal lattice for the two PhC structures.