Ref HAL: hal-00390294_v1
DOI: 10.1016/j.jcrysgro.2009.01.037
WoS: 000267302900002
Exporter : BibTex | endNote
17 Citations
Résumé:

Since a few years, a lot of research efforts have been devoted to InN, the least known of the semiconducting group-III nitrides. Most of the samples available today have been grown using the molecular beam epitaxy technique, and fewer using the metal organic vapor phase epitaxy (MOVPE) method. Whatever the method, the growth of InN is extremely challenging, in particular due to the fact that no lattice matched substrate is available. This paper present results on the improvement of the InN crystal quality in MOVPE. In particular, the use of carbon halides to enhance the lateral growth is demonstrated, leading to extremely smooth InN surfaces. A new process for the realization of InN nanostructures by recrystallization is presented, which allows to obtain a better crystal quality than direct MOVPE growth