Auteur(s): Bouguen Laure, Contreras S., Jouault B., Konczewicz L., Camassel J., Cordier Y., Azize M., Chenot S., Baron N.
(Article) Publié: Applied Physics Letters, vol. 92 p.043504 (2008)
Ref HAL: hal-00535633_v1
DOI: 10.1063/1.2838301
WoS: 000252860400112
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14 Citations
Résumé:
We report a comparative investigation of the magnetic response of long channel AlGaN/AlN/GaN heterostructures (Hall-field effect transistor devices) grown on three different semi-insulating templates on silicon and sapphire. From Hall effect measurements conducted up to 573 K (300 degrees C), we find that some of these specific devices can be used as magnetic sensors in a large temperature range (similar to 600 degrees C) with a magnetic sensitivity close to 60 V/A T and a small thermal drift. On the best sample, between liquid helium temperature and 300 degrees C, the average value of the thermal drift is only -7 ppm/degrees C. (C) 2008 American Institute of Physics.