Terahertz imaging with GaAs field-effect transistors Auteur(s): Lisauskas A., Von spiegel W., Boubanga tombet Stephane, El Fatimy A., Coquillat D., Teppe F., Diakonova N., Knap W., Roskos H. g. (Article) Publié: Electronics Letters, vol. 44 p.408-409 (2008) Ref HAL: hal-00540633_v1 DOI: 10.1049/el:20080172 WoS: 000254797500012 Exporter : BibTex | endNote 63 Citations Résumé: Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging. |