|Terahertz imaging with GaAs field-effect transistors |
(Article) Publié: Electronics Letters, vol. 44 p.408-409 (2008)
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Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.