- Terahertz imaging with GaAs field-effect transistors doi link

Auteur(s): Lisauskas A., Von spiegel W., Boubanga tombet Stephane, El Fatimy A., Coquillat D., Teppe F., Diakonova N., Knap W., Roskos H. g.

(Article) Publié: Electronics Letters, vol. 44 p.408-409 (2008)

Ref HAL: hal-00540633_v1
DOI: 10.1049/el:20080172
WoS: 000254797500012
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Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.