Ref HAL: hal-00390298_v1
DOI: 10.1143/JJAP.48.051002
WoS: 000266570200013
Exporter : BibTex | endNote
4 Citations
Résumé:

Simple calculations performed in the context of linear elasticity theory, indicate that growth of InN on (hkl)-oriented substrates minimizes the density of elastic energy stored in the strained layers and boosts the critical thickness for coherent growth of strained layers to unexpected values. This renders possible to grow two-dimensional InN–GaN structures with InN layers thicknesses larger than one monolayer and, in addition, continuous in the growth plane. How impacting this finding can be for optoelectronic devices using indium nitride-based heterostructures is finally discussed.