Auteur(s): Moret M., Gil B., Ruffenach S., Briot O., Giesen Christoph, Heuken Michael, Rushworth Simon, T. Leese, Succi Marco
Conference: 2nd International Symposium on Growth of III-Nitride (ISGN-2) (Laforet Shuzenji, Izu, JP, 2008-07-06)
Actes de conférence: Journal of Crystal Growth, vol. 311 p.2795 (2009)
Texte intégral en Openaccess : 
Ref HAL: hal-00390296_v1
DOI: 10.1016/j.jcrysgro.2009.01.009
WoS: 000267302900010
Exporter : BibTex | endNote
57 Citations
Résumé:
We have performed a detailed investigation of the photoluminescence features taken at 2 K on a series of GaxIn1-xN alloys grown by metal-organic vapour-phase epitaxy through the whole composition range. The evolution of the photoluminescence lineshape of GaInN alloys in the indium-rich region is dominated by doping effects rather than by band-gap tailing effects correlated to existence of random chemical crystal inhomogeneities. The lineshape of the photoluminescence indicates a residual electron concentration of about 1018–1019cm-3 in the bulk part of the epilayers. The value we get for the bowing parameter is b=2.8 eV.