Auteur(s): Gil B., Briot O., Moret M., Ruffenach S., Giesen Christoph, Heuken Michael, Rushworth Simon, Leese T., Succi Marco
Conference: 2nd International Symposium on Growth of III-Nitrides (ISGN-2) (Laforet Shuzenji, Izu, JP, 2008-07-06)
Actes de conférence: Journal of Crystal Growth, vol. 311 p.2798 (2009)
Texte intégral en Openaccess : 
Ref HAL: hal-00390295_v1
DOI: 10.1016/j.jcrysgro.2009.01.010
WoS: 000267302900011
Exporter : BibTex | endNote
19 Citations
Résumé:
We report the experimental determination of the interband deformation potentials of indium nitride by combining both optical spectroscopy investigations and high-resolution X-ray measurements performed on a series of InN films grown by metal organic vapour-phase epitaxy. Our approach, which follows the one used for GaN by Shan et al. [Phys. Rev. B. 54 (1996) 13460], gives here for InN a1=-7.66 eV, a2=-2.59 eV, b1=5.06 eV, and b2=-2.53 eV.