The epitaxial growth of indium nitride using berlinite (AlPO4) and other piezoelectric crystals of the quartz family as substrates Auteur(s): Moret M., Ruffenach S., Briot O., Gil B., Pauthe M. (Article) Publié: Applied Physics Letters, vol. 95 p.041910 (2009) Ref HAL: hal-00540227_v1 DOI: 10.1063/1.3193655 WoS: 000268611900025 Exporter : BibTex | endNote 4 Citations Résumé: We report the growth of indium nitride on AlPO4, which is a piezoelectric substrate, by using metal organic vapor phase epitaxy (MOVPE). The substrate we used was the as-grown (011) surface of an AlPO4 crystal grown by hydrothermal synthesis. InN growth occurs as the nonpolar M-plane. The structural, optical, and electrical properties of the epilayer are comparable with those of layers obtained by conventional growth on polar GaN MOVPE templates deposited on C-plane sapphire. We discuss the utilization of other MX-O-4 oxides for growing nitrides. |