- Resonance detection of terahertz radiation in submicrometer field-effect GaAs/AlGaAs transistors with two-dimensional electron gas doi link

Auteur(s): Antonov A. v., Gavrilenko V. i., Maremyanin K. v., Morozov S. v., Teppe F., Knap W.

(Article) Publié: Semiconductors, vol. 43 p.528-531 (2009)
Texte intégral en Openaccess : istex

Ref HAL: hal-00540630_v1
DOI: 10.1134/S106378260904023X
WoS: 000265563600023
Exporter : BibTex | endNote
5 Citations

Resonance detection of terahertz radiation by submicrometer field-effect GaAs/AlGaAs transistors (with the gate length L = 250 nm) with two-dimensional electron gas in the channel has been studied at T = 4.2 K. For these transistors, it is shown for the first time that the maximum of the response (the drain-source photovoltage) shifts with an increasing frequency to the region of higher gate voltages in accordance with the Dyakonov-Shur theory. It is shown that, as temperature is increased to 77 K, the dependence of the photovoltage on the gate voltage becomes nonresonant, which is caused by a decrease in the mobility.