Auteur(s): Sonde S., Giannazzo F., Raineri V., Yakimova R., Huntzinger J.-R., Tiberj A., Camassel J.
(Article) Publié: Physical Review B, vol. 80 p.241406 (2009)
Ref HAL: hal-00543845_v1
DOI: 10.1103/PhysRevB.80.241406
WoS: 000273229200033
Exporter : BibTex | endNote
96 Citations
Résumé:
The current transport across the graphene/4H-SiC interface has been investigated with nanometric lateral resolution by scanning current spectroscopy on both epitaxial graphene (EG) grown on (0001) 4H-SiC and graphene exfoliated from highly oriented pyrolytic graphite deposited on the same substrate [deposited graphene (DG)]. This study reveals that the Schottky barrier height (SBH) of EG/4H-SiC (0.36 +/- 0.1 eV) is similar to 0.49 eV lower than the SBH of DG/4H-SiC (0.85 +/- 0.06 eV). This result is discussed in terms of the Fermi-level pinning similar to 0.49 eV above the Dirac point in EG due to the presence of positively charged states at the interface between the Si face of 4H-SiC and the carbon-rich buffer layer, which is the precursor for EG formation.