|A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation |
Conference: 29th International Conference on Physics of Semiconductors Rio de Janeiro, BRAZIL (Rio de Janeiro, BR, 2008-07-27)
Ref HAL: hal-00545966_v1
Exporter : BibTex | endNote
The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency is related to the layout of contact electrodes that play a role of an antenna. Our results show that the antenna coupling efficiency is one of the most important parameter to optimize in future field effect transistor based terahertz detectors.