- A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation hal link

Auteur(s): Sakowicz M., Lusakowski J., Kapierz K., Grynberg M., Gwarek W., Boubanga-Tombet S., Coquillat D., Knap W., Shchepetov A., Bollaert S.

Conference: 29th International Conference on Physics of Semiconductors Rio de Janeiro, BRAZIL (Rio de Janeiro, BR, 2008-07-27)
Actes de conférence: PHYSICS OF SEMICONDUCTORS, vol. 1199 p.503 (2009)

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The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency is related to the layout of contact electrodes that play a role of an antenna. Our results show that the antenna coupling efficiency is one of the most important parameter to optimize in future field effect transistor based terahertz detectors.