Auteur(s): Nadar S., Coquillat D., Sakowicz M., Videlier H., Teppe F., Diakonova N., Knap W., Peiris J.-M., Lyonnet J., Seliuta D., Kasalynas I., Valusis G., Madjour K., Théron D., Gaquière C., Poisson M.-A.
Conference: 15th International Semiconducting and Insulating Materials Conference (SIMC-XV) Vilnius Univ, Vilnius, LITHUANIA (, LT, 2009-06-15)
Actes de conférence: PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, vol. 6 p.2855-2857 (2009)
Texte intégral en Openaccess : 
Ref HAL: hal-00545979_v1
DOI: 10.1002/pssc.200982532
WoS: 000279548000062
Exporter : BibTex | endNote
10 Citations
Résumé:
Two experiments demonstrate that high electron mobility transistors (HEMTs) are well suited for terahertz (THz) imaging. We have shown that HEMTs can be effectively used as plasma wave detectors in a THz imaging system at frequencies higher than 1 THz at room temperature and this device are sensitive to the polarization direction of THz radiation.