- Terahertz imaging using high electron mobility transistors as plasma wave detectors doi link

Auteur(s): Nadar S., Coquillat D., Sakowicz M., Videlier H., Teppe F., Diakonova N., Knap W., Peiris J.-M., Lyonnet J., Seliuta D., Kasalynas I., Valusis G., Madjour K., Théron D., Gaquière C., Poisson M.-A.

Conference: 15th International Semiconducting and Insulating Materials Conference (SIMC-XV) Vilnius Univ, Vilnius, LITHUANIA (, LT, 2009-06-15)
Actes de conférence: PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, vol. 6 p.2855-2857 (2009)
Texte intégral en Openaccess : istex

Ref HAL: hal-00545979_v1
DOI: 10.1002/pssc.200982532
WoS: 000279548000062
Exporter : BibTex | endNote
10 Citations

Two experiments demonstrate that high electron mobility transistors (HEMTs) are well suited for terahertz (THz) imaging. We have shown that HEMTs can be effectively used as plasma wave detectors in a THz imaging system at frequencies higher than 1 THz at room temperature and this device are sensitive to the polarization direction of THz radiation.