Auteur(s): Coquillat D., Nadar S., Teppe F., Diakonova N., Boubanga-Tombet S., Knap W., Nishimura T., Meziani Y. M., Otsuji T., Popov V. V., Tsymbalov G. M.
Conference: 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16) (, FR, 2009-08-24)
Actes de conférence: Journal of Physics Conference Series, vol. 193 p.2074 (2009)
Texte intégral en Openaccess : 
Ref HAL: hal-00545987_v1
DOI: 10.1088/1742-6596/193/1/012074
WoS: 000277100400074
Exporter : BibTex | endNote
2 Citations
Résumé:
We observed a photovoltaic non-resonant terahertz photoresponse in a InGaAs/GaAs heterostructure with a large area double-grating-gate at room temperature. Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields exited in the structure by incoming terahertz radiation allowed us to interpret this detection as coming from the depleted regions of the channel.