|Terahertz detection in a double-grating-gate heterotransistor |
Conference: 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16) (, FR, 2009-08-24)
Ref HAL: hal-00545987_v1
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We observed a photovoltaic non-resonant terahertz photoresponse in a InGaAs/GaAs heterostructure with a large area double-grating-gate at room temperature. Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields exited in the structure by incoming terahertz radiation allowed us to interpret this detection as coming from the depleted regions of the channel.