Auteur(s): Videlier H., Nadar S., Diakonova N., Sakowicz M., Trinh Van Dam T., Teppe F., Coquillat D., Knap W., Denorme S., Skotnicki T., Peiris J. M., Lyonnet J.
Conference: 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16) (, FR, 2009-08-24)
Actes de conférence: Journal of Physics Conference Series, vol. 193 p.2095 (2009)
Texte intégral en Openaccess : 
Ref HAL: hal-00545991_v1
DOI: 10.1088/1742-6596/193/1/012095
WoS: 000277100400095
Exporter : BibTex | endNote
8 Citations
Résumé:
Because of their competitive Noise Equivalent Power (NEP) at room temperature and their fast modulation frequency, Field Effect Transistors (FETs) are one of the most promising devices for room temperature multipixel THz detection and imaging. We report here on an experimental study of the sub-THz detection as a function of the gate length in Silicon FETs and discuss the physical basis of their optimisation.