Auteur(s): Gil B., Bretagnon T., Gühne T., Bougrioua Z., Nemoz M., Chmielowski R., Leroux M.
Conference: PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors (Rio de Janeiro, BR, 2008-07-27)
Actes de conférence: AIP Conference Proceeding, vol. 1199 p.191-192 (2010)
Texte intégral en Openaccess : 
Ref HAL: hal-00546363_v1
DOI: 10.1063/1.3295362
Exporter : BibTex | endNote
Résumé:
Nonpolar (11-20) (Ga,In)N multi-quantum wells have been studied by polarized, temperature dependent photoluminescence (PL). A non monotonic temperature dependence of the difference in PL peak energies recorded for E parallel to c or E perpendicular to c, and of the polarization ratio is observed. We interpret these effects by first an orthorhombic distortion of the crystal and an increased electron-hole exchange energy relative to GaN. This increase is in agreement with calculations on the effect of confinement on the exciton exchange splitting.