|Detection of terahertz radiation by AlGaN/GaN field-effect transistors |
Auteur(s): Ortolani M., Di Gaspare A., Giovine E., Evangelisti F., Foglietti V., Doria A., Gallerano G.P., Giovenale E., Messina G., Spassovsky I., Coppa A., Lanzieri C., Peroni M., Cetronio A., Sakowicz M., Knap W.
Conference: 34th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2009) (, KR, 2009-09-21)
Ref HAL: hal-00546345_v1
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High electron mobility transistors can work as room-temperature direct detectors of radiation at frequency much higher than their cutoff frequency. One open issue is how the radiation couples to the sub-wavelength transistor channel. Here, we studied the coupling of radiation to an AlGaN/GaN transistor with cut-off frequency of 30 GEL Local irradiation with a Free Electron Laser source at 0.15 THz allowed us to selectively couple the signal to the channel through one transistor terminal at a time. Far-field experiments at 0.15 - 0.94 THz were also performed in order to study the nonlinear properties of the transistor channel.