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- Enhancement of terahertz radiation by CW infrared laser excitation in a doubly interdigitated grating gates transistors doi link

Auteur(s): Meziani Y. M., Nishimura T., Tsuda H., Suemitsu T., Knap W., Popov V. V., Otsuji T.

Conference: 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16) (, FR, 2010-08-24)
Actes de conférence: Journal of Physics Conference Series, vol. 193 p.2071 (2009)
Texte intégral en Openaccess : istex


Ref HAL: hal-00546373_v1
DOI: 10.1088/1742-6596/193/1/012071
WoS: 000277100400071
Exporter : BibTex | endNote
Résumé:

We report on a broadband terahertz emission from a doubly interdigitated grating gates high electron mobility transistor. The observed emission was explained as due to the excitation of multi mode of plasmons: thermally excited incoherent modes and instability-driven coherent modes. The experiment was performed using Fourier spectrometer system coupled with high sensitive 4K Silicon bolometer under the vacuum. To enhance the efficiency, the device was subjected, from the backside, to a CW 1.5 μm laser beam. Dependence of the emission on the gate bias was observed and interpreted as due to the self-oscillation of the plasma waves.