Auteur(s): El Fatimy A., Suemitsu T., Otsuji T., Diakonova N., Knap W., Meziani Y. M., Vandenbrouk S., Madjour K., Théron D., Gaquiere Ch, Prystawko P., Skierbiszewski C.
Conference: 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16) (, FR, 2009-08-24)
Actes de conférence: Journal of Physics Conference Series, vol. 193 p.2072 (2009)
Texte intégral en Openaccess : 
Ref HAL: hal-00546387_v1
DOI: 10.1088/1742-6596/193/1/012072
WoS: 000277100400072
Exporter : BibTex | endNote
Résumé:
In this work, we report on room temperature terahertz radiation from sub-micron size GaN/AlGaN based high electron mobility transistors (HEMTs). They could successfully replace the standard Fourier Transform spectrometer source and were investigated with a standard Si-bolometer as a detector. The relatively broad (~1THz) emission line was observed. The maxima were found to be tunable by the gate voltage between 0.75 and 2.1 THz. The observed emission was interpreted as due to the current driven plasma waves instability in the two-dimensional electron gas. The emitted power from a single device reached 150 nW, showing possible application of these transistors as compact sources for terahertz spectroscopy and imaging.