Auteur(s): V. Ovsyannikov Sergey, V. Shchennikov Vladimir, E. Karkin Alexander, Polian Alain, Briot O., Ruffenach S., Gil B., Moret M.
(Article) Publié: Applied Physics Letters, vol. 97 p.032105 (2010)
Ref HAL: hal-00516955_v1
DOI: 10.1063/1.3466913
WoS: 000280255800044
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Résumé:
Indium nitride was grown on Al2O3 substrate and characterized by x-ray diffraction, Raman, electrical resistivity, Hall, and magnetoresistance studies. Thermoelectric and electrical properties of free-standing films were measured in situ under high pressure HP cycling to 20 GPa, across a phase transformation to a rock-salt-structured lattice. HP-cycling-induced amorphization was established. The thermopower Seebeck effect data evidence that both crystalline and amorphous InN kept n-type conductivity to 20 GPa. Pressure effect on the carrier concentration and effective mass is analyzed. Two features that can be related to structural transitions in amorphous InN were found near 11 and 17 GPa.