Differences Between Graphene Grown On Si-face And C-face Auteur(s): Camara N., Caboni A., Huntzinger J.-R., Tiberj A., Mestres N., Godignon P., Camassel J.
Conference: 13th International Conference on Silicon Carbide and Related Materials (Nurnberg (GERMANY), FR, 2009-10-11) Ref HAL: hal-00543832_v1 Exporter : BibTex | endNote Résumé: Epitaxial graphene growth is significantly different depending on the polarity of the 6H-SiC surface: Si- or C-face. On the Si-face, a uniform coverage of few layers on the whole sample can be obtained, but with electrical properties disturbed by the presence of a Carbon-rich buffer layer at the interface. On the contrary, on the C-face, we demonstrated that almost free-standing very large monolayers of graphene can be obtained by covering the sample with a graphitic cap during the growth. |