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- Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors hal link

Auteur(s): Nadar S., Videlier H., Coquillat D., Teppe F., Sakowicz M., Diakonova N., Knap W., Seliuta D., Kasalynas Irmantas, Valusis Gintaras

(Article) Publié: Journal Of Applied Physics, vol. 108 p.054508 (2010)


Ref HAL: hal-00545617_v1
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Résumé:

GaAs nanometric field effect-transistors are used for room temperature single-pixel imaging using radiation frequencies above 1 THz. Images obtained in transmission mode at 1.63 THz are recorded using transistors operating in a photovoltaic mode with spatial resolution of 300 mu m and voltage sensitivity of about 8 mV/W. A reduction in response with increasing frequency was observed and mitigated by the application of a source-drain current, leading to the demonstration of imaging at up to 2.54 THz.