- THz imaging with low-cost 130 nm CMOS transistors doi link

Auteur(s): Schuster Franz, Sakowicz Maciej, Siligaris Alexandre, Dussopt Laurent, Videlier H., Coquillat D., Teppe F., Giffard Benoît, Dobroiu Adrien, Skotnicki Thomas, Knap W.

Conference: SPIE2010-Security and Defence SD108 Millimetre Wave and Terahertz Sensors and Technology (Toulouse, FR, 2010-09-20)
Actes de conférence: Millimetre Wave and Terahertz Sensors and Technology III, vol. 7837 p.3 (2010)

Ref HAL: hal-00550843_v1
DOI: 10.1117/12.864877
WoS: 000287712500003
Exporter : BibTex | endNote
2 Citations

We report on active imaging with CMOS transistors at 300 GHz and 1.05 THz. Two basic focal plane arrays consisting of nMOS transistors and wide-band bow-tie antennas have been implemented in a low-cost 130 nm CMOS technology. Raster scan imaging of objects concealed in a paper envelope has been achieved at 300 GHz with a commercial radiation source. The images clearly reveal the concealed objects with a dynamic range of 35 dB and a resolution of 3 mm. At 1.05 THz, the pixels achieve a responsivity of 50 V/W and a noise equivalent power of 900 pW/Hz0.5.