Résumé:

We have performed a variational calculation of the heavy-hole exciton for (Ga,In)As-GaAs strained-layer quantum wells embedded in p-i-n structures. The calculation has been made for sample growth along both the (001) and (111) directions. We show that the influence of the piezoelectric field may sometimes lead to strong orientation-dependent properties. In particular, when piezoelectric fields are present, the radiative lifetimes of heavy-hole excitons are strongly dependent on the thickness of the (Ga,In)As layer.